? semiconductor components industries, llc, 2015 february, 2015 ? rev. 2 1 publication order number: ntgs3136p/d ntgs3136p, nvgs3136p power mosfet ?20 v, ?5.8 a, single p?channel, tsop?6 features ? low r ds(on) in tsop?6 package ? 1.8 v gate rating ? fast switching ? nv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? optimized for battery and load management applications in portable equipment ? high side load switch ? switching circuits for game consoles, camera phone, etc. maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source v oltage v dss ?20 v gate?to?source v oltage v gs 8.0 v continuous drain current (note 1) steady state t a = 25 c i d ?5.1 a t a = 85 c ?3.6 t 5 s t a = 25 c ?5.8 power dissipation (note 1) steady state t a = 25 c p d 1.25 w t 5 s 1.6 continuous drain current (note 2) steady state t a = 25 c i d ?3.7 a t a = 85 c ?2.7 power dissipation (note 2) t a = 25 c p d 0.7 w pulsed drain current t p = 10 s i dm ?20 a operating junction and storage temperature t j , t stg ?55 to 150 c lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces) 2. surface?mounted on fr4 board using the minimum recommended pad size (cu area = 0.0775 in sq). 3 4 1256 p?channel tsop?6 case 318g style 1 marking diagram xxx = device code m = date code = pb?free package pin assignment 3 2 1 4 gate drain source 5 6 drain drain drain v (br)dss r ds(on) typ i d max ?20 v 25 m @ ?4.5 v 32 m @ ?2.5 v www. onsemi.com 41 m @ ?1.8 v xxx m 1 1 ?5.1 a ?4.5 a ?2.5 a (note: microdot may be in either location) see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information
ntgs3136p, nvgs3136p www. onsemi.com 2 thermal resistance maximum ratings parameter symbol value unit junction?to?ambient ? steady state (note 3) r ja 100 c/w junction?to?ambient ? t = 5 s (note 3) r ja 77 junction?to?ambient ? steady state (note 4) r ja 185 3. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces) 4. surface?mounted on fr4 board using the minimum recommended pad size (cu area = 0.0775 in sq). electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?20 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j id = ?250 a, reference 25 c ?13 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ?20 v t j = 25 c ?1.0 a t j = 85 c ?5.0 gate?to?source leakage current i gss v ds = 0 v, v gs = 8.0 v 0.1 a on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = ?250 a ?0.4 ?1.0 v negative threshold temperature coefficient v gs(th) /t j 3 mv/ c drain?to?source on resistance r ds(on) v gs = ?4.5 v, i d = ?5.1 a 25 33 m v gs = ?2.5 v, i d = ?4.5 a 32 40 v gs = ?1.8 v, i d = ?2.5 a 41 51 forward transconductance g fs v ds = ?5.0 v, i d = ?5.1 a 22 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = ?10 v 1901 pf output capacitance c oss 274 reverse transfer capacitance c rss 175 total gate charge q g(tot) v gs = ?4.5 v, v ds = ?10 v; i d = ?5.1 a 18 29 nc threshold gate charge q g(th) 0.7 gate?to?source charge q gs 2.4 gate?to?drain charge q gd 4.3 gate resistance r g 7.6 switching characteristics (note 6) turn?on delay time t d(on) v gs = ?4.5 v, v dd = ?10 v, i d = ?1.0 a, r g = 6.0 9 19 ns rise time t r 9 19 turn?off delay time t d(off) 99 160 fall time t f 48 79 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ?1.7 a t j = 25 c ?0.7 ?1.2 v t j = 125 c ?0.6 reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = ?1.7 a 37 60 ns product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 5. pulse test: pulse width 300 s, duty cycle 2% 6. switching characteristics are independent of operating junction temperatures
ntgs3136p, nvgs3136p www. onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 ?50 ?25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ?v ds , drain?to?source voltage (v) ?i d, drain current (a) figure 1. on?region characteristics figure 2. transfer characteristics ?v gs , gate?t o?source voltage (v) figure 3. on?resistance vs. gate?to?source voltage ?v gs , gate?t o?source voltage (v) r ds(on), drain?to?source resistance ( ) ?i d, drain current (a) figure 4. on?resistance vs. drain current and gate voltage ?i d, drain current (a) figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c v gs = ?4.5 v ?2.5 v ?2 v ?1.5 v ?1.8 v t j = 25 c t j = 125 c t j = ?55 c i d = ?5.1 a v ds = ?5 v t j = 25 c v gs = ?4.5 v i d = ?4.5 a v gs = ?5.1 v r ds(on), drain?to?source resistance (normalized) r ds(on), drain?to?source resistance ( ) figure 6. capacitance variation drain?to?source voltage (v) c, capacitance (pf) v gs = 0 v t j = 25 c f = 1 mhz c oss c iss c rss ?2 v ?1.8 v 0 4.0 8.0 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 t j = 25 c t j = 125 c 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0 4.0 8.0 12 16 20 ?2.5 v 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 024681012
ntgs3136p, nvgs3136p www. onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) figure 7. gate?to?source and drain?to?source voltage vs. total charge figure 8. diode forward voltage vs. current figure 9. threshold voltage figure 10. single pulse maximum power dissipation single pulse time (s) power (w) q g , total gate charge (nc) v ds = ?10 v i d = ?5.1 a t j = 25 c ?v gs q gs q gd ?v ds ?v sd , source?to?drain voltage (v) v gs = 0 v t j = 25 c t j = 150 c figure 11. maximum rated forward biased safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 v gs = ?8.0 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 100 s 1 ms 10 ms dc ?i d , drain current (a) ?v ds , drain?to?source voltage (v) ?50 0 ?25 25 0.7 0.5 0.3 0.2 50 125 100 t j , junction temperature ( c) 75 150 i d = ?250 a ?v gs(th) (v) 0.8 0.6 0.4 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 q t ?v gs , gate?t o?source voltage (v) 1.0 10 30 0 0.2 0.4 0.6 0.8 1.0 1 .2 ?v ds , drain?to?source voltage (v) ?i s , source current (a) 80 70 60 50 40 30 20 10 0 1e?3 1e?2 1e?1 1 1e+1 1e+2 1e+ 3 0.01 0.1 1 1e?04 1e?03 1e?02 1e?01 1 1e+01 1e+02 1e+0 3 t, time (s) r (t) , effective transient thermal response (normalized) figure 12. fet thermal response duty cycle = 0.5 0.2 0.1 0.05 0.01 0.02
ntgs3136p, nvgs3136p www. onsemi.com 5 ordering information device marking package shipping ? ntgs3136pt1g sd tsop?6 (pb?free) 3000 / tape & reel NVGS3136PT1G* vsd ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *nv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable.
ntgs3136p, nvgs3136p www. onsemi.com 6 package dimensions tsop?6 case 318g?02 issue v style 1: pin 1. drain 2. drain 3. gate 4. source 5. drain 6. drain 23 4 5 6 d 1 e b e1 a1 a 0.05 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimensions d and e1 are determined at datum h. 5. pin one indicator must be located in the indicated zone. c *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max millimeters 0.90 1.00 1.10 a1 0.01 0.06 0.10 b 0.25 0.38 0.50 c 0.10 0.18 0.26 d 2.90 3.00 3.10 e 2.50 2.75 3.00 e 0.85 0.95 1.05 l 0.20 0.40 0.60 0.25 bsc l2 ? 0 1 0 1.30 1.50 1.70 e1 e recommended note 5 l c m h l2 seating plane gauge plane detail z detail z 0.60 6x 3.20 0.95 6x 0.95 pitch dimensions: millimeters m p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntgs3136p/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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